Technical Program
Program Sessions: Wednesday May 31st 9:30 AM – 12:35 PM
Session 3: Advancements in Copper/Silicon-Oxide Hybrid Bonding
Committee: Interconnections
Room: Mediterranean 2 & 3
Session Co-Chairs:
Katsuyuki Sakuma
IBM Corporation
Email: [email protected]
Matthew Yao
GE Aviation
Email: [email protected]
Papers:
1. A Study on the Surface Activation of Cu and Oxide for Hybrid Bonding Joint Interface
Bohee Hwang – Samsung Electronics Co., Ltd.-Test and System Package
Soohwan Lee – Samsung Electronics Co., Ltd.-Test and System Package
Youngkun Jee – Samsung Electronics Co., Ltd.-Test and System Package
Sangcheon Park – Samsung Electronics Co., Ltd.-Test and System Package
Gyeongjae Jo – Samsung Electronics Co., Ltd.-Test and System Package
Kwangbae Kim – Samsung Electronics Co., Ltd.-Test and System Package
Sungjin Han – Samsung Electronics Co., Ltd.-Test and System Package
Ilhwan Kim – Samsung Electronics Co., Ltd.-Test and System Package
Jumyong Park – Samsung Electronics Co., Ltd.-Test and System Package
Hyunchul Jung – Samsung Electronics Co., Ltd.-Test and System Package
Dongwoo Kang – Samsung Electronics Co., Ltd.-Test and System Package
Un-Byoung Kang – Samsung Electronics Co., Ltd.-Test and System Package
2. Fine Pitch Die-to-Wafer Hybrid Bonding
Thomas Workman – Adeia
Jeremy Theil – Adeia
Gill Fountain – Adeia
Dominik Suwito – Adeia
Cyprian Uzoh – Adeia
Guilian Gao – Adeia
K. M. Bang – Adeia
Bongsub Lee – Adeia
Laura Mirkarimi – Adeia
3. Direct Die to Wafer Cu Hybrid Bonding for Volume Production
Chun Ho Fan – ASMPT Hong Kong, Ltd.
Hoi Ping Ng – ASMPT Hong Kong, Ltd.
Siu Cheung So – ASMPT Hong Kong, Ltd.
Ming Li – ASMPT Hong Kong, Ltd.
Siu Wing Lau – ASMPT Hong Kong, Ltd.
Thomas Uhrmann – ASMPT Hong Kong, Ltd.
Juergen Burggraf – ASMPT Hong Kong, Ltd.
Mariana Pires – ASMPT Hong Kong, Ltd.
4. Demonstration of a Wafer Level Face-To-Back (F2B) Fine Pitch Cu-Cu Hybrid Bonding With High Density TSV for 3D Integration Applications
Jerzy Javier Suarez Berru – CEA-LETI
Stephane Nicolas – CEA-LETI
Nicolas Bresson – CEA-LETI
Myriam Assous – CEA-LETI
Stephan Borel – CEA-LETI
5. Cu-Cu Wiring: The Novel Structure of Cu-Cu Hybrid Bonding
Yoshihisa Kagawa – Sony Semiconductor Solutions Corporation
Takumi Kamibayashi – Sony Semiconductor Solutions Corporation
Nobutoshi Fujii – Sony Semiconductor Solutions Corporation
Shunsuke Furuse – Sony Semiconductor Solutions Corporation
Taichi Yamada – Sony Semiconductor Solutions Corporation
Tomoyuki Hirano – Sony Semiconductor Solutions Corporation
Hayato Iwamoto – Sony Semiconductor Solutions Corporation
6. New Cu Bulge-Out Mechanism Supporting Sub-Micron Scaling of Hybrid Wafer-to-Wafer Bonding
Jo De Messemaeker – imec
Liesbeth Witters – imec
Boyao Zhang – imec
Yan Wen Tsau – KU Leuven
Ferenc Fodor – imec
Joeri De Vos – imec
Gerald Beyer – imec
Kristof Croes – imec
Eric Beyne – imec
7. Electrical Analysis of Wafer-to-Wafer Copper Hybrid Bonding at Sub-Micron Pitches
Kevin Ryan – TEL Technology Center, America, LLC
Christopher Netzband – TEL Technology Center, America, LLC
Adam Gildea – TEL Technology Center, America, LLC
Yuji Mimura – TEL Technology Center, America, LLC
Satohiko Hoshino – TEL Technology Center, America, LLC
Ilseok Son – TEL Technology Center, America, LLC
Hirokazu Aizawa – TEL Technology Center, America, LLC
Kaoru Maekawa – TEL Technology Center, America, LLC
