Technical Program

Program Sessions: Friday June 2nd 9:30 AM – 12:35 PM

Session 27: Next Generation Wafer-to-Wafer Copper Bonding
Committee: Interconnections
Room: Mediterranean 2 & 3

Session Co-Chairs:

Li Li
Cisco Systems, Inc.
Email: [email protected]

Dingyou Zhang
Broadcom, Inc.
Email: [email protected]


1. 0.5 µm Pitch Next Generation Hybrid Bonding With High Alignment Accuracy for 3D Integration
Christopher Netzband – TEL Technology Center, America, LLC
Kevin Ryan – TEL Technology Center, America, LLC
Nathan Ip – Tokyo Electron America, Inc.
Yuji Mimura – Tokyo Electron America, Inc.
Ilseok Son – TEL Technology Center, America, LLC
Hirokazu Aizawa – TEL Technology Center, America, LLC
Xuemei Chen – Tokyo Electron America, Inc.

2. Low Temperature and Fine Pitch Nanocrystalline Cu/SiCN Wafer-To-Wafer Hybrid Bonding
Wei-Lan Chiu – Industrial Technology Research Institute
Ou-Hsiang Lee – Industrial Technology Research Institute
Tzu-Ying Kuo – Industrial Technology Research Institute
James Yi-Jen Lo – Nanya Technology Corporation
Chiang-Lin Shih – Nanya Technology Corporation
Hsih-Yang Chiu – Nanya Technology Corporation
Hsiang-Hung Chang – Industrial Technology Research Institute

3. 0.5 µm Pitch Wafer-to-Wafer Hybrid Bonding With SiCN Bonding Interface for Advanced Memory
Kai Ma – Applied Materials, Inc.
Nikos Bekiaris – Applied Materials, Inc.
Sesh Ramaswami – Applied Materials, Inc.
Taotao Ding – EV Group, Inc.
Juergen Burggraf – EV Group, Inc.
Gernot Probst – EV Group, Inc.
Thomas Uhrmann – EV Group, Inc.

4. Fine-Pitch 30 µm Cu-Cu Bonding using Electroless Nano-Ag
Hsiang-Wei Tsai – Advanced Semiconductor Engineering, Inc.
Yung-Sheng Lin – Advanced Semiconductor Engineering, Inc.
Chun-Wei Chiang – Advanced Semiconductor Engineering, Inc.
Yun-Ching Hung – Advanced Semiconductor Engineering, Inc.
Chin-Li Kao – Advanced Semiconductor Engineering, Inc.
Ping-Hung Hsieh – Advanced Semiconductor Engineering, Inc.
I-Ting Lin – Advanced Semiconductor Engineering, Inc.
Chih-Yuan Hsu – Advanced Semiconductor Engineering, Inc.

5. Influence of H2O in Bonding Interfaces on Bonding Strength of Plasma-Activated Bonded Silicon Oxide
Hirotaka Yoshioka – Sony Semiconductor Solutions Corporation
Nobutoshi Fujii – Sony Semiconductor Solutions Corporation
Takushi Shigetoshi – Sony Semiconductor Solutions Corporation
Takahiro Kamei – Sony Semiconductor Solutions Corporation
Kengo Kotoo – Sony Semiconductor Solutions Corporation
Naoki Ogawa – Sony Semiconductor Solutions Corporation
Tatsuya Horikiri – Sony Semiconductor Solutions Corporation
Shunsuke Furuse – Sony Semiconductor Solutions Corporation
Sotetsu Saito – Sony Semiconductor Solutions Corporation
Suguru Saito – Sony Semiconductor Solutions Corporation
Yoshiya Hagimoto – Sony Semiconductor Solutions Corporation
Hayato Iwamoto – Sony Semiconductor Solutions Corporation

6. Not All Nanograined Copper is Created Equal - In Pursuit of a Robust Low Temperature Copper to Copper Bonding Process
Yun Zhang – Shinhao Materials LLC
Peipei Dong – Shinhao Materials LLC
Jing Wang – Shinhao Materials LLC
Xingxing Zhang – Shinhao Materials LLC
Klaus Leyendecker – Umicore Galvanotechnik GmbH
Tsvetina Dobrovolska – Umicore Galvanotechnik GmbH
Michael Herkommer – Umicore Galvanotechnik GmbH
Volker Wohlfarth – Umicore Galvanotechnik GmbH
Josh Liang – Umicore Galvanotechnik GmbH

7. A Study on Multi-Chip Stacking Process by Novel Dielectric Polymer Adhesive for Cu-Cu Hybrid Bonding
Yuzo Nakamura – Mitsui Chemicals, Inc.
Kahori Tamura – Mitsui Chemicals, Inc.
Yasuhisa Kayaba – Mitsui Chemicals, Inc.
Wataru Okada – Mitsui Chemicals, Inc.
Takuo Shikama – Mitsui Chemicals, Inc.
Satoshi Inada – Mitsui Chemicals, Inc.