Technical Program

Thursday, June 01, 2017

Session 21: 3D Cu-Cu and Micro Bump Bonding Technologies
1:30 PM - 5:10 PM
Committee: Interconnections
Room: Southern Hemisphere I

Session Co-Chairs:

Katsuyuki Sakuma
IBM T. J. Watson Research Center
T +1-914-945-2080
ksakuma@us.ibm.com
Ho-Young Son
SK Hynix
T +82-31-630-2858
hoyoung.son@sk.com

Papers:

1. 1:30 PM - Morphology of Low-Temperature All-Copper Interconnects Formed by Dip Transfer
Luca Del Carro - IBM
Jonas Zuercher - IBM
Tom Wildsmith - Intrinsiq Materials
Gustavo Ramos - Atotech
Thomas Brunschwiler - IBM
Sebastian Gerke - IBM

2. 1:55 PM - Enabling Chip-to-Substrate All-Cu Interconnections: Design of Engineered Bonding Interfaces for Improved Manufacturability and Low-Temperature Bonding
Ninad Shahane - Georgia Institute of Technology
Kashyap Mohan - Georgia Institute of Technology
Gustavo Ramos - Atotech
Arnd Kilian - Atotech
Robin Taylor - Atotech
Frank Wei - DISCO
Antonia Antoniou - Georgia Institute of Technology
Pulugurtha Markondeya Raj - Georgia Institute of Technology
Vanessa Smet - Georgia Institute of Technology
Rao Tummala - Georgia Institute of Technology

3. 2:20 PM - Low-Temperature and Low-Pressure Cu-Cu Bonding by Pure Cu Nanosolder Paste for Wafer-Level Packaging
Junjie Li - Huazhong University of Science and Technology
Tielin Shi - Huazhong University of Science and Technology
Xing Yu - Huazhong University of Science and Technology
Chaoliang Cheng - Huazhong University of Science and Technology
Jinhu Fan - Huazhong University of Science and Technology
Guanglan Liao - Huazhong University of Science and Technology
Zirong Tang - Huazhong University of Science and Technology

4. 3:30 PM - Dual Damascene Compatible, Copper Rich Alloy Based Surface Passivation Mechanism for Achieving Cu-Cu Bonding at 150°C for 3D IC Integration
Asisa Kumar Panigrahi - Indian Institute of Technology,Hyderabad
Tamal Ghosh - Indian Institute of Technology,Hyderabad
Siva Rama Krishna Vanjari - Indian Institute of Technology,Hyderabad
Shiv Govind Singh - Indian Institute of Technology,Hyderabad

5. 3:55 PM - Thermal and Electrical Performance of Direct Bond Interconnect Technology for 2.5D and 3D Integrated Circuits
Akash Agrawal - Invensas
Shaowu Huang - Invensas
Guilian Gao - Invensas
Liang Wang - Invensas
Laura Mirkarimi - Invensas

6. 4:20 PM - Electrical Performance of High Density 10 µm Diameter 20 µm Pitch Cu-Pillar with Chip to Wafer Assembly
Lucile Arnaud - CEA-LETI
Arnaud Garnier - CEA-LETI
Rémi Franiatte - CEA-LETI
Alain Toffoli - CEA-LETI
Stéphane Moreau - CEA-LETI
Franck Bana - CEA-LETI
Séverine Chéramy - CEA-LETI

7. 4:45 PM - Critical Factors Affecting Structural Transformations in 3D IC Micro Joints
Hong-Wei Yang - National Taiwan University
H.Y. Yu - National Taiwan University
C. Robert Kao - National Taiwan University